Courses Catalogue

Syllabus of the course: Elements of Electronics

In this web page we provide the syllabus of the course Elements of Electronics, offered by the Department of Physics.
The list of the courses offered during the current accademic year is available here.
The list of all courses offered by the Department of Physics is available here.

InstructorE. Iliopoulos
ProgramMonday 14:00-16:00, Room 4
Wednesday 16:00-19:00, Lab
Friday 15:00-17:00, Room 4
Web page
Goal of the courseThe goal of the course is to provide some introductory knowledge in the use of basic elements of electronics and in the design of simple circuits.
SyllabusIntroduction to Electronic Systems: Information and Signals, Frequency Spectrum of Signals, Analog and Digital Signals, Amplifiers, Circuit Models for Amplifiers, Frequency Response of Amplifiers.
Operational Amplifiers: The Op-Amp Terminals, the Ideal Op-Amp, Analysis of Circuits Containing Ideal Op-Amps, The Inverting Configuration, Application of the Inverting Configuration, the Non-Inverting Configuration, Examples of Op-Amp Circuits, Non Ideal Performance of Op-Amps, the Internal Structure of IC Op-Amps, Large Signal Operation of Op-Amps, Common-Mode Rejection, Input and Output Resistances.
Diodes: The Ideal Diode, Terminal Characteristics of Real Junction Diode, Analysis of Diode Circuits, the Small-Signal Model and its Application, the Breakdown Region and Zener Diodes, Rectifiers, Limiters and Comparators, the Clamped Capacitor or DC Restored, Physical Operation of Diodes, Basic Semiconductor Concepts, the pn Junction under Open-Circuit Conditions, the pn Junction under Reverse-Bias Conditions, the pn Junction in the Beakdown Region, the pn Juction under Forward-Bias Conditions.
Bipolar Junction Transistors(BJT's): Physical Structure and Models of Operation, Operation of the npn Transistor in the Active Region, the pnp Transistor, Circuit Symbols and Convections, Graphical Representation of Transistor Characteristics, DC Analysis of Transistor Circuits, the Transistor as an Amplifier, Biasing the BJT for Discrete-Circuit Design, Classical Single-Stage Transistor Amplifiers, the Transistor as a Switch, Complete Static Characteristics and Graphical Analysis.
Field Effect Transistors(FET's): Structure and Physical Operation of Enhancement-Type MOSFET, I-V Characteristics of the Enhancement-Type MOSFET, the Depletion-Type MOSFET, the Junction Field Effect Transistor, Analysis of FET Circuits in DC Operation, the FET as an Amplifier, FET Biasing with Discrete Elements, Classical Single-Stage FET Amplifiers, Integrated-Circuit MOS Amplifiers, Switches with FET's, Gallium Arsenide MESFET's.
BibliographyS. Sedra and K. C. Smith «Microelectronic Circuits», Volume Α, Εκδόσεις Παπασωτηρίου.
J. Millman and A. Grabel «Microelectronics», Volume Α’, Εκδόσεις Τζιόλα.

University of Crete - Department of Physics  - Voutes University Campus - GR-71003 Heraklion, Greece
phone: +30 2810 394300 - fax: +30 2810 394301