Education:

Alexandros Georgakilas received his Ph.D. from the Physics Department, University of Crete, in 1990. His thesis was on the epitaxial growth of III-V semiconductors on crystalline Si substrates.

Career:

Between 1984 and 1995 he worked as a research assistant or research associate in the Institute of Electronic Structure and Laser (IESL) of the Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete. In 1987 he was at Thomson-CSF, Paris, France and in 1991-1992 at the University of Maryland, College Park, MD, USA. In September 1995 he joined the Physics Department of University of Crete as an assistant professor and was appointed as an associate professor in October 2002. He was promoted to a Professor in 2010.

Interests:

Molecular Beam Epitaxy (MBE) of novel III-V heterostructure/nanostructure materials (mainly III-nitrides) for high speed electronic and optoelectronic semiconductor components.
Development of technologies combining III-V and Si semiconductors for integration of electronic and optoelectronic devices, with an important application concerning the optical interconnection of Si integrated circuits.
Analysis of the structural and electronic properties of III-V semiconductor heterostructures and interfaces and the material effects on the performance of III-V semiconductor devices.

Telephone:

+30-2810-394104

Fax:

+30-2810-394106

Email:

georgaka@uoc.gr

Office:

103 Physics Bldg.

Webpage:

http://www.iesl.forth.gr/people/person.aspx?id=118

ResearcherID:

http://www.researcherid.com/rid/G-7944-2011