Georgakilas Alexandros







103 Physics Bldg.


Alexandros Georgakilas obtained his BSc. in Physics from the University of Patras in 1984 and his Ph.D. from the Physics Department, University of Crete in 1990. His thesis was focused on the epitaxial growth of III-V semiconductors on crystalline Si substrates and the research was carried out in the microelectronics laboratories of Thomson-CSF/LCR in Paris and the Research Center of Crete (RCC)/IESL at Heraklion.


Between 1984 and 1995 he worked as a research assistant or research associate in the Institute of Electronic Structure and Laser (IESL) of the Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete. In 1987 he was at Thomson-CSF, Paris, France and in 1991-1992 at the University of Maryland, College Park, MD, USA. In September 1995 he joined the Physics Department of University of Crete as an assistant professor and was appointed as an associate professor in October 2002. He was promoted to a Professor in 2010.


Molecular Beam Epitaxy (MBE) of novel III-V heterostructure/nanostructure materials (mainly III-nitrides) for high speed electronic and optoelectronic semiconductor components.
Development of technologies combining III-V and Si semiconductors for integration of electronic and optoelectronic devices, with an important application concerning the optical interconnection of Si integrated circuits.
Analysis of the structural and electronic properties of III-V semiconductor heterostructures and interfaces and the material effects on the performance of III-V semiconductor devices.

University of Crete - Department of Physics  - Voutes University Campus - GR-71003 Heraklion, Greece
phone: +30 2810 394300 - fax: +30 2810 394301