Courses Catalogue

Syllabus of the course: Introduction to Semiconductor Devices

In this web page we provide the syllabus of the course Introduction to Semiconductor Devices, offered by the Department of Physics.
The list of the courses offered during the current accademic year is available here.
The list of all courses offered by the Department of Physics is available here.

InstructorA. Georgakilas
ProgramWednesday, 09:00-11:00, Amphitheater Β
Friday, 09:00-11:00, Amphitheater Β
Web page
Goal of the courseThe course aims to 2nd year physics students. It introduces the basic concepts of solid state physics, the properties of semiconductors and the methods of semiconductor growth and processing. It explains the realization and operation of fundamental microelectronics and optoelectronics semiconductor devices (diode, transistor, laser diode, LED, photodiode), which constitute the underlying technology of the modern information and telecommunication systems.
SyllabusIntroduction to Semiconductors: Kinds of solid state materials, chemical bonds and electrical properties, families of semiconductors and their applications, energy bands and bandgap, the free electron and hole carriers, donor and acceptor dopants, n-type and p-type conductivity.
Physics of carriers: Fermi-Dirac statistics, Fermi level, effective densities of states, distribution and concentrations of carriers at thermal equilibrium, dependence on donor and acceptor concentrations and temperature, drift and diffusion currents, generation-recombination, absorption and emission of photons.
Techniques of semiconductor growth and device processing: Crystal growth and epitaxial growth, Czochralski methods for Si and GaAs, molecular beam epitaxy (MBE), metallorganic vapor phase epitaxy (MOVPE), device fabrication processes, photolithography, kinds of photoresists, fabrication of metallic patterns with the lift-off or etching methods.
Semiconductor devices and integrated circuits: Energy band diagrams of semiconductor devices, pn junction, built-in electric field, rectification behavior, operation of LED, photodiode and solar cell, fabrication and operation of laser diode, the FET transistors, fabrication and operation of GaAs MESFET, introduction to dimensions, speed and fabrication of integrated circuits.
Bibliography«Οπτοηλεκτρονική», Jasprit Singh, ΕΚΔΟΣΕΙΣ Α.ΤΖΙΟΛΑ Ε., 1998
«Αρχές Ηλεκτρονικών Υλικών και Διατάξεων», S. O. Kasap, ΕΚΔΟΣΕΙΣ Παπασωτηρίου, 2004
«Electronic Materials Science: For Integrated Circuits in Si and GaAs», J.W. Mayer & S. S. Lau, Macmillan, NY, 1988
«Semiconductor Fundamentals», 2nd Edition, Modular Series on Solid State Devices, Volume I, R. F. Pierret, Addison Wesley, MA, 1988
«Solid State electronic Devices», B.G. Streetman and S. Banerjee, 6th Edition, Prentice Hall
«Σηµειώσεις», Α. Γεωργακίλας

University of Crete - Department of Physics  - Voutes University Campus - GR-70013 Heraklion, Greece
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