Courses Catalogue

Syllabus of the course: Physics of Semiconductor Devices


In this web page we provide the syllabus of the course Physics of Semiconductor Devices, offered by the Department of Physics.
The list of the courses offered during the current accademic year is available here.
The list of all courses offered by the Department of Physics is available here.

CodeΦ-572
TypeB
ECTS6
Hours4
SemesterSpring
InstructorA. Georgakilas
ProgramThursday, 13:00-15:00, 1st floor seminar room
Friday,9:00-11:00, 1st floor seminar room
Web page
Goal of the courseThis is a post-graduate level course. It provides physical insight into the operation of fundamental semiconductor devices, with analytical mathematical description of the physical processes and operation characteristics of the devices. The acquired knowledge constitutes the necessary scientific background for further studies on micro-, nano- and opto-electronics.
SyllabusIntroduction to the physics of semiconductors :
Families of semiconductor, energy bands, effective mass, free electron and hole, energy band diagram, distribution and concentrations of carriers at thermal equilibrium, generation-recombination, drift and diffusion currents, quasi-Fermi levels, continuity equations, minority carrier diffusion equations

pn junction diode :
Abrupt and linear junctions, electrostatic description, C-V and I-V equations for the ideal diode, deviations from ideal behavior

Bipolar junction transistor (BJT) : Terminology, symbols and regions of operation, I-V relations for the ideal transistor, I-V relations including recombination in the base, additional deviations from the ideal transistor, Ebers-Moll equations
Metal-semiconductor junction :
Energy band diagram of ideal junction, rectifying contact (Schottky diode), electrostatic description, Schottky effect, basic I-V relation, thermionic emission theory, diffusion theory, tunneling currents, experimental determination of ΦB and Vbi, effect of surface states, ohmic contacts
Metal-insulator-semiconductor junction : The metal-oxide-silicon (MOS) junction, bias on the MOS, the different states of the surface region of the semiconductor, capacitance, flat-band voltage, threshold voltage and density of charge in the inversion layer, effect of oxide and interface charges, Charge-Couple Devices (CCDs)

Field Effect Trnasistor (FET) :
I-V relations for FETs with gate consisting of a pn junction (JFET) or a Schottky diode (MESFET) or a MOS junction (MOSFET), determination of MOSFET parameters
Bibliography«Οπτοηλεκτρονική», Jasprit Singh, ΕΚΔΟΣΕΙΣ Α.ΤΖΙΟΛΑ Ε., 1998
«Αρχές Ηλεκτρονικών Υλικών και Διατάξεων», S. O. Kasap, ΕΚΔΟΣΕΙΣ Παπασωτηρίου, 2004
«Device Electronics for Integrated Circuits», R.S. Muller & T.I. Kamins, 2nd Edition, John Wiley & Sons, NY, 1986
«Advanced Semiconductor Fundamentals», R. F. Pierret, Modular Series on Solid State Devices v.6, Addison-Wesley, 1989
«The PN Junction Diode», Second Edition, G. W. Neudeck, Modular Series on Solid State Devices v.2, Addison-Wesley, 1989
«The Bipolar junction Transistor», G. W. Neudeck, Modular Series on Solid State Devices v.3, Addison-Wesley, 1989
«Physics of Semiconductor Devices», 3rd edition, S. M. Sze and K. K. Ng, John Wiley & Sons, NJ, 2007
«Physics of Semiconductor Devices», M. Shur, Prentice Hall, NJ, 1990
«Solid State electronic Devices», B.G. Streetman and S. Banerjee, 6th Edition, Prentice Hall

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