Research Highlights
Polarization engineering in InGaN/GaN Solar Cells
The InGaN compound semiconductors (alloys of Indium-Gallium and Nitrogen) are a class of materials with exceptional properties and promises for the development of a new generation of solar cells. Their direct energy bandgap spans the range from 3.4 eV (GaN) to 0.65 eV (InN) covering almost entirely the solar spectrum. However, despite the intense international research effort, up to now, the obtained solar cell devices’ efficiency characteristics, fabricated out of InGaN/GaN junctions, have been poor. Picture: Energy band and major recombination mechanisms’ rates diagrams for conventional (p-i-n) -left- and novel (n-p) polarization-engineered -right- approaches of InGaN/GaN heterostructure based photovoltaic devices. Article: “Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions", S.A.Kazazis, E. Papadomanolaki and E. Iliopoulos, IEEE J. Photov. 8, 118 (2018). |
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